SATPC0034131 Tab 04 SOW.pdf
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- Attached to
- HF2C SiC Pressure-Temperature Sensors Packaging Federal contract opportunity
- Solicitation number
- 80NSSC24860776Q
About this file
This document outlines requirements for a sole source contract opportunity with NASA. The National Aeronautics and Space Administration Shared Services Center is seeking packaging of fifteen silicon carbide pressure sensors to withstand temperatures up to 900 degrees Celsius and pressures up to 500 pounds per square inch for a minimum of one hour. The preferred packaging architecture uses aluminum nitride and brazes the header to a Kovar tube with leak rates below 6x10-7. Leakage current must not exceed 0.1 amps at 900 degrees Celsius. Siena Technologies, Inc. is the intended sole source awardee under authority of FAR 13.106-1(b)(1)(i). Interested parties may submit capabilities by February 1, 2024 to be considered for competitive procurement.
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Specification for the Packaging of on-chip integrated silicon carbide pressure and micro-TC sensors for sensing evaluation at 900 ℃ in atmospheric environment (1/24/24)
• Fifteen (15) SiC pressure sensors shall be packaged based on the specification below.
• The components to be used for packaging the silicon carbide pressure sensors shall withstand pressure of up to 500 psi and temperature up to 900 oC for a minimum of one hour.
• The preferred packaging architecture shall be based on the MEMS Direct Chip Attach concept similar to the one referenced in Fig. 20 of US patent 7,518,234.
• The package shall be a 7-through-hole via with central reference cavity fabricated in the preferred aluminum nitride (AlN) header that is closest CTE matched to the SiC sensor material.
• The diameter of the AlN header shall be 0.278” and the shoulder diameter to be 0.2465”.
• The AlN header that houses the SiC sensor shall be brazed to Kovar tube with OD=0.279” and ID=0.251” or any complementary low CTE material with low oxidization rate that would survive a minimum of 1 hour in air at 900 ℃.
• The brazing material to braze the AlN header to the Kovar tube shall be non-oxidizing or have low oxidation rate to survive a minimum of 1 hour in air at 900 ℃.
• The brazing material to braze the AlN header to the Kovar tube shall be leak free during use for a minimum of 1 hour in air at 900 ℃. Leak rate lower than 6x10-7 would be acceptable.
• The leakage current between pins (Au or Pt) and the AlN header carrier substrate shall be no more than 0.1 µA (10 Vdc) at 900 oC.
• The length of the Kovar tube shall be determined prior to packaging.
• The Au or Pt pins shall extend out of the Kovar tube and the dam that is attached to it, and be rigidly secured at the backend of the Kovar tube with non-electrically conducting high temperature rated ceramic paste.
• Each packaged sensor shall be tested at room temperature prior to shipment.
In addition to Fig. 20 of US patent 7,518,234 as reference, an image of similar package is shown below. The AlN header is brazed to the Kovar tube, which in turn is brazed to the dam. The backend of the package is also shown.
File details come from the government source that posted it. Updated .