Specifications.pdf

Specifications for Plasma Focused Ion Beam (PFIB) Instrument

Brand Name or Equal: FEI Part # 1078702: Helios PFIB 6” UC or Equivalent

General Requirements

A “dual beam” SEM/FIB instrument with a FEG electron source and a Xe+ plasma xenon source

Monochromated electron beam for low accelerating voltage (<1 keV) high resolution imaging (<3 nm) of non-conducting samples sensitive to beam damage (i.e. polymers, nano-tubes)

Ultra-high resolution imaging capability for the SEM

It must be possible for microscope to interact with other PC systems and networks for data storage

On-line step-by-step alignment instruction/automated alignment must exist

Integrated beam current measurement

Must be compatible with equipment with the ability to perform rapid prototyping of complex structures, TEM foils and MEMS devices in an automated environment with both the electron and ion beams using additive and subtractive processes

Must include the ability to serially acquire images in an automated environment for 3D visualization and characterization

Compatibility with standard SEM attachments, EBSD, EDS and in situ load stages

New or equipment used for demonstration purposes is acceptable so long as the equipment was used no more than 300 hours and is covered by warranty for no less than 12 months

Installation (site evaluation, materials, labor, and basic user training) shall be included

Chamber Requirements

Large chamber with >12 inch width

A chamber with sufficient ports for EBSD, EDS and an in situ load stage, with additional ports for other add-ons

Stage with 2.0 micron repeatability at 0 degree in x and y-directions

10 nm/min drift

CCD camera for in-chamber live viewing of sample

SE/BSE detectors

Oil-free vacuum system

Electron Optic Requirements

Field emission gun (electron source) with a monochromator (energy spread of less than 0.2 eV)

Accelerating voltage adjustable from 500 eV to 30 keV

Automated alignments of the SEM column

Beam current control from 1 pA to 100 nA

Electron beam resolution (high-vacuum imaging):

o ≤1.0 nm @ 15 keV o ≤1.5 nm @ 1 keV

FIB Source Requirements

A FIB using a Xe+ plasma source

Accelerating voltage adjustable between 2 kV to 30 kV

Beam current control from 1.5 pA to 1.3 μA

Ion beam resolution < 25 nm