63-6086-16_-_MTR_of_Magnetron_Sputtering_System.pdf

Minimum Technical Requirements for Magnetron Sputtering System

The sputtering system must be comprised of the main deposition chamber; vacuum pumping and plumbing components and pressure controls, magnetron sputtering sources, DC and RF generators, substrate heater and holder, power distribution, closed-loop chiller, computer, and control software. The following is a list of technical specifications required for minimum operation of the requested system.

1. The main deposition chamber must consist of a 304L stainless steel, electro-polished, cylindrical style chamber.

2. The main deposition chamber must consist of (2) 6 inch CF viewports with integrated shutters, capable of removing shutter drive without breaking vacuum, ports available for (3) gauge heads, ports available for a residual gas analyzer, one port available for a future load-lock, one port available for a quartz crystal thickness monitor and a spare 8 inch CF port to allow connection to a future vacuum chamber or glovebox

3. The main deposition chamber must be designed to incorporate RHEED as a future upgrade.

The chamber system design must be 100% compatible with RHEED with no internal shielding required.

4. The deposition chamber must be pumped by a turbomolecular vacuum pump with a pumping speed higher than 250 liters per second and backed by a dry rotary vane pump with a pumping speed higher than 8 cubic feet per minute. The pumping system must maintain a minimum base pressure of 2.0 x 10-7 Torr

5. The turbomolecular vacuum pump must possess an automatic delayed vent valve capable of nitrogen purging to allow oxygen processing, and one manual vent valve.

6. The pumping system must include a gauge controller and (3) vacuum gauges: (1) Pirani gauge, (1) 0.1 Torr capacitance manometer gauge, and (1) nude ion gauge.

7. The deposition chamber must possess (2) mass flow control (MFC) gas lines for argon and reactive gas. The argon gas must be plumbed to one sputtering source.

8. The deposition chamber must have reactive gas plumbed to a substrate gas distributor that introduces gas uniformly at the substrate surface.

9. The deposition chamber must accommodate (2) additional MFC (for a total of 4).

10. The deposition chamber must possess automatic downstream pressure control using a throttling gate valve with stepper motor.

11. The deposition chamber must accommodate up to (5) 2 inch con-focal sputtering sources, a spare 6 inch CF center port for a future sputtering source, ion source, or evaporation source.

Unused ports must be blanked off.

12. The 2 inch sputtering gun must accommodate up to 0.125 inch thick magnetic targets including pure iron.

13. The deposition chamber must include (3) 2 inch HV con-focal sputtering sources with, pneumatic shutters, gas injection capability and an isolation structure to prevent target material cross-contamination.

14. The sputtering sources must have modular magnet design to allow balanced, unbalanced, and magnetic material configurations. The sputtering sources must operate with both magnetic and non-magnetic materials.

15. The magnets must be located in vacuum, outside of cooling water, with Curie point of at least 200 C.

16. The sputtering system must be capable of con-focal deposition uniformity of less than +/- 3% over a 4 inch diameter wafer with a maximum of 5 mm edge exclusion.

17. The sputtering source shutters must be “flip-top” and not “rotary”.

18. The substrate holder must accommodate up to a 4 inch diameter substrate and capable of rotation at a minimum of 35 rpm. The substrate holder must be capable of minimum 2 inch z-motion for load-lock transfer and working distance adjustment.

19. The substrate holder must be capable of heating to higher than 825 C via quartz lamps in an oxygen environment

20. The substrate holder must be capable of RF/DC biasing capability during rotation, heating, and deposition.

21. The substrate holder must include a 100W RF generator with auto-matching network specifically dedicated for biasing.

22. The system must include a closed-loop chiller with a temperature set point range from 5 C to 35 C and with a temperature stability less than or equal to +/- 0.2 C

23. The chiller must have a minimum cooling capacity of 2300W.

24. The chiller must have a pump capacity higher than 60 PSI and a flow rate higher than 12 L/min

25. The chiller must be configured for single phase, 200-230 VAC (50/60 Hz).

26. The system must include (1) 750W DC power supply (1000V, 2A), with integrated 4-way switchbox, (1) 300W RF power supply with auto matching network and (1) automated 4-way switchbox

27. The system must take (2) single-phase electrical drops, 30A, 120V input voltage and includes

(2) breakers to independently turn on/off a turbomolecular pump and a mechanical pump, and a single breaker to turn the both the turbomolecular and mechanical pump on/off together.

28. The system must include a PC and computer control software.

29. The software must control (5) DC and (4) RF power supplies with plasma detection, (1) DC and (1) RF switchbox, (4) MFCs gas lines, a substrate heater and rotation controller, and a stepper motor-based throttling gate valve in pressure and position modes.

30. The computer control must monitor and log kW hours and process parameters.

31. The system must include water cooling and vacuum interlocks.