MOCVD_Technical_Specifications.docx

METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) SYSTEM FOR GROWTH OF TRANSITION METAL DICHALCOGENIDES SUCH as MoS2, WS2, WSe2, MoTe2 and RELATED MATERIALS

NRL Code 6870 requires a metal-organic chemical vapor deposition (MOCVD) system to support ongoing efforts in electronic and optoelectronic material development. To meet our objectives, the system:

1.0: MOCVD GROWTH SYSTEM

1.1 The system must have a fully enclosed steel frame system cabinet with built in lights, interlocked soft-seal doors with windows, solid panel soft-seal doors, and hazardous gas detectors and controllers

1.2 The cabinet must be usable with a dual growth chamber system with a common load lock chamber and linear transfer arms

1.3 The load lock chamber must be configured for use with TWO (2) growth chambers. The system will have a single reaction chamber and transfer arm and the ports of load lock chamber for second reaction chamber and second transfer arm will be blanked off but capable of future upgrade.

1.4 The growth chamber must have a high speed rotating disc configuration with single 2” or 3” wafer loading capacity, and water cooled baseplate and reactor wall

1.5 The growth chamber must be configured with single zone resistive heater with heat shields, electrical connectors and base ring for growth temperature up to 1150°C with thermocouples for temperature control

1.6 The Loadlock chamber must be configured with substrate heating capability for outgassing

1.7 The chamber must be a double walled reactor with temperature controlled flow flanges including one vertical optical viewport for in-situ metrology

1.8 The Loadlock must have a gate valve to separate it from growth chamber

1.9 The system must have Baratron pressure monitoring on the reaction chamber for process, on the loadlock chamber and on the exhaust line, as well as MKS throttle valves and controller for process pressure control

1.10 The system must have a motor rotation in growth chamber up to 1500rpm with ferrofluidic seal

1.11 The system must have a turbo molecular load lock pump, roughing pump and gauges/isolation assembly on loadlock chamber, and a growth chamber dry processing pump with at least 1000 l/min. pumping speed suitable for corrosive gases.

1.12 The system must have a heat exchanger for reactor flow flange temperature control and FOUR (4) temperature controlled recirculating water baths for metal-organic precursors

1.13 The system must have a DeviceNet MFCs, PCs, Baratrons, and transducers

1.14 The system must come with FOUR (4) SiC coated graphite wafer carriers: Two (2) two-inch wafer carriers and two (2) three-inch wafer carriers.

1.15 The system must have a fitting for product gas monitoring with a separate user-provided RGA tool

1.16 The system must have a removable quartz liner in the main growth chamber (quantity of 2) to minimize the interaction between source materials and gases and the steel chamber walls.

2.0: GAS DELIVERY, GAS HANDLING SYSTEM, GAS ABATEMENT

2.1 The system must have six (6) source gas delivery channels with single common manifolds for use with MO precursors such as Molybdeum hexacarbonyl (MHC), Tungsten hexacarbonyl (THC), Diethyl sulphide (DES), Dimethyl selenium, Dimethyl telluride, as well as precursors of the same class, where the manifold is switchable from N2, H2 or Argon carrier gas.

2.2 Three (3) gas channels will be configured with Double Dilution capability and all channels will have heating up to 75C and gas line heating up to 90C

2.3 They system must be designed to allow for pulsed growth capabilities by minimizing the distance between the switching manifold and the growth chamber.

2.4 The system must have gas delivery networks for use with hydride precursors for S and Se

2.5 The system must have two stainless steel multi-tray solid source sublimator containers for Mo and W sources with heat blankets on source lines.

2.6 The system must have point of use Argon, Hydride, and Nitrogen purifiers, including installation on the gas panel, as well as two additional spaces in the panel for future upgrades to use WF6 and MoF6 gases.

2.7 The system must maintain precise gas delivery conditions during growth runs, as well as have line heaters and controllers between the sources and growth chamber for heating up to 90C. There must be high purity electro-polished stainless steel tubing connection for hydrides, metal-organics, and purge lines.

2.8 The system must come with a Controlled Decomposition Oxidation (CDO) Abatement System that offers:

2.8.1 Both water scrubbing with recirculating water scrubbing loop and combustion abatement capabilities that are compatible with the proposed source/gas materials

2.8.2 Interlocks/alarms integrated into control software, including startup and interlock configuration with control software

3.0: ELECTRONIC CONTROL SYSTEM

3.1 The system must come with a rack mount personal computer (PC) with dual flat panel monitors, and include software setup, configuration, and manuals

3.2 The system software must include:

3.2.1 Real-time status of all critical system parameters such as valve positions, gas flows, temperature, pressure etc.

3.2.2 Configurable recipes with ability to change recipe while executing, use loops and nested loops for repeating structures and insertion of sub recipes

3.2.3 Configurable software interlocks and alarms

3.2.4 Advanced data plotting screen with at least four simultaneously plots with multiple signal traces per plot – real time or past run data

3.2.5 Handshake protocol between PLC and control PC to send the MOCVD system into a safe state if PC power is lost or communication is interrupted

3.2.6 Encryption security dongle so that software will not run without security dongle connected to the control computer

3.2.7 Recipe editing or creation without the use of the MOCVD system control computer

3.2.8 A routine editor to create new routines or edit routines

3.2.9 A device editor to add or configure new hardware and incorporate into recipes, alarms and/or routines

4.0: INSTALLATION, TRAINING, WARRANTY, DELIVERY, AND DEMONSTRATION

4.1 Must include all necessary on-site installation and calibration:

4.1.4 System operation training for the CDO Abatement System

4.1.5 Training, maintenance and operation of gas purifiers

4.2 Must include customer software setup, user training and remote and onsite customer support, including software updates and special feature requests.

4.3 The system must demonstrate the successful delivery of all source materials and gases provided by User to the growth chamber including:

4.3.1 The partial pressures of precursors Molybdeum hexacarbonyl (MHC) and Tungsten hexacarbonyl (THC) at least between 10-4 torr to 10-1 torr

4.3.2 The partial pressures of Diethyl sulphide (DES) at least between 10-3 torr to 1 torr

4.3.3 The partial pressure of H2O during growth processing using gases/sources described above must be less than 10-5 torr.

4.4 Must include at least 6 month system hardware warranty, and 12 month software warranty and support and maintenance.

4.5 If the vendor does not have a demonstrated track record of assembling and installing similar MOCVD reactors as proposed here, they must provide proof of feasibility documentation.