SOW.pdf
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- Attached to
- RTX Diode Modeling Proposal and Hardware Federal contract opportunity
- Solicitation number
- 80NSSC25898911Q
About this file
This Statement of Work (SOW) details NASA Glenn Research Center's (GRC) requirement for a large periphery model and Gallium Nitride (GaN) diode devices to support ongoing research and simulation efforts. The contractor must provide 200 C170581-J-03 CHIP-20 GaN Schottky diodes with specific performance requirements, including a global cut-off frequency > 30 GHz, junction capacitance < 1 pf at 10 GHz, and operational power handling > 2W of continuous wave power at 10 GHz. The periphery model must be compatible with Cadence software or an equivalent industry-standard platform, fully integrated with NASA GRC's existing BEAM simulation environment.
The deliverables include the large periphery model in a compatible format and the GaN diodes, with documentation detailing specifications and usage guidelines. Delivery timelines are critical: components must be delivered by 7/2025 to prevent research and development delays, with models to be delivered by 10/2025. NASA will provide necessary simulation parameters and design specifications to ensure proper component integration. The technical requirements mandate that alternative models or components must be validated for compatibility before acceptance, and the GaN diodes must precisely match the specified part number to maintain consistency in circuit performance, testing, and prototyping.
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Statement of Work (SOW)
1. Background
NASA Glenn Research Center (GRC) requires a large periphery model and Gallium Nitride (GaN) diode devices to support ongoing research and simulation efforts. These components are essential for accurate modeling, circuit prototyping, and advancing related technology development.
2. Scope
The contractor shall provide:
A large periphery model that is compatible with Cadence software or an equivalent industry-standard platform capable of supporting the required simulation and design work.
Gallium Nitride (GaN) diodes that meet the following specifications:
o Part Number: C170581-J-03 CHIP-20 GaN Schottky diodes o Quantity: [200] o Performance requirements:
global cut-off frequency (f−3dB) > 30 GHz Junction Capacitance < 1 pf at 10 GHz Operational power handling of > 2W of incident, continuous wave, power through the diode at 10 GHz Bare die with GSG probe pads and top microstrip gold plates contacts
3. Technical Requirements
The periphery model must be fully compatible with NASA GRC’s existing simulation environment, ensuring seamless integration with ongoing BEAM simulation efforts.
The GaN diodes must match the specified part number to maintain consistency in circuit performance, testing, and prototyping.
Alternative models or components must be validated for compatibility before acceptance.
4. Deliverables
Delivery of the large periphery model in a format compatible with NASA’s design software.
GaN diodes delivered within the required timeframe to support project milestones.
Documentation detailing the specifications, usage guidelines, and compatibility verification.
5. Period of Performance
The required components shall be delivered no later than 7/2025 to prevent delays in research and development.
The models should be delivered no later than 10/2025 to prevent delays in research and development.
6. Government Furnished Information (GFI)
NASA will provide the necessary simulation parameters and design specifications to ensure proper integration of the components.
File details come from the government source that posted it. Updated .