The National Science Foundation (NSF) awarded a 3-year, $486,461 project grant under the Engineering (CFDA 47.041) program to the University of Louisiana at Lafayette (ULL). This grant, titled "ECLIPSE: ULTRATHIN AND RELIABLE COPPER DIFFUSION BARRIERS FOR ADVANCED COPPER INTERCONNECTS," supports fundamental research to develop new materials and processes for advanced copper interconnects in semiconductor manufacturing.
The key research objectives are to study amorphous carbon (a-C) and nitrogen-doped amorphous carbon (a-C:N) films deposited by plasma-enhanced chemical vapor deposition as ultra-thin and reliable copper diffusion barrier coatings. The project aims to correlate the film growth mechanisms with microstructure, chemical bonding, and optical/mechanical properties to achieve smooth, defect-free barrier layers with strong adhesion and barrier performance. This research is expected to provide new fundamental knowledge to enable continued innovation in semiconductor chip technology and help sustain U.S. leadership in this critical industry.