Project Grant 2218604

This Project Grant from the National Science Foundation's Computer and Information Science and Engineering program (CFDA 47.070) provides $650,000 to Georgia Tech Research Corporation from October 2022 to September 2025. The award will fund research into low-temperature embedded memory devices for near-memory and in-memory computing applications. Specifically, the grantee will characterize resistive random-access memory, ferroelectric field-effect transistors, and two-transistor gain-cell embedded dynamic random-access memory devices fabricated in-house and through foundry partnerships at cryogenic temperatures of 77 Kelvin. The goal is to evaluate these technologies' potential to enable over 10x energy savings and over 3x performance improvements for data-intensive workloads like machine learning when compared to room temperature operation. Outcomes will include experimental performance data on embedded memories at low temperatures and a benchmark framework to guide co-optimization of near-memory and in-memory computing accelerators for cryogenic environments.